| PART |
Description |
Maker |
| CF007-0106 CF007-01 |
Dual Gate GaAs FET Chip
|
MIMIX[Mimix Broadband]
|
| 3SK147 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
| NE41137 |
N-Channel GaAs Dual Gate MES FET
N-CHANNEL GAASDUAL-GATE MESFET
|
California Eastern Laboratories
NEC[NEC]
|
| SGM2016AP SGM2016AM SGM2016AM_AP |
GaAs N-channel Dual-Gate MES FET
From old datasheet system
|
Sony
|
| 3SK165A |
GaAs N-channel Dual Gate MES FET
From old datasheet system
|
Sony
|
| MGF0907 MGF0907B |
L /S BAND POWER GaAs FET
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
| BF1102 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1203 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1203 BF1203-2015 |
Dual N-channel dual gate MOS-FET
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| M38510/02006BAB M38510/02006BAA M38510/02002BDB M3 |
CERAMIC CHIP/MIL-PRF-55681
Triple 3-input NAND Gate 3输入与非
Quad 2-input NAND Gate 输入与非
Single 8-input NAND Gate 输入与非
Dual 4-input NAND Gate 输入与非
Triple 3-input NAND Gate 输入与非
Dual 4-input NAND Gate 4输入与非
|
ITT, Corp.
Astrodyne, Inc.
Ecliptek, Corp.
Electronic Theatre Controls, Inc.
Bourns, Inc.
Newhaven Display International, Inc.
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
|
| NE25139U74 NE25139U73 NE25139U71 NE25139-T1 NE2513 |
GENERAL PURPOSE DUAL-GATE GaAS MESFET
|
California Eastern Labs
NEC[NEC]
Duracell
NEC Corp.
|
